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Certification Of A Standard Reference Material For The Determination Of Interstitial Oxygen Concentration In Semiconductor Silicon By Infrared Spectrophotometry
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Certification Of A Standard Reference Material For The Determination Of Interstitial Oxygen Concentration In Semiconductor Silicon By Infrared Spectrophotometry
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Title
Certification Of A Standard Reference Material For The Determination Of Interstitial Oxygen Concentration In Semiconductor Silicon By Infrared Spectrophotometry
Call No
C 13.10:260-121
Authors
Rennex, Brian
National Institute of Standards and Technology (U.S.)
Subjects
Silicon--Oxygen content--Measurement.
Language
English
Published
Gaithersburg, MD : U.S. Dept. of Commerce, Technology Administration, National Institute of Standards and Technology ; Washington, DC : For sale by the Supt. of Docs., U.S. G.P.O., 1994.
Publication Desc
xiv, 55 p. : ill. ;
Series
NIST special publication 260-121
Standard reference materials
Dimensions
28 cm.